Mak transistors 2 The valley Hall effect in MoS
نویسندگان
چکیده
, 1489 (2014); 344 Science et al. K. F. Mak transistors 2 The valley Hall effect in MoS This copy is for your personal, non-commercial use only. clicking here. colleagues, clients, or customers by , you can order high-quality copies for your If you wish to distribute this article to others here. following the guidelines can be obtained by Permission to republish or repurpose articles or portions of articles ): July 28, 2014 www.sciencemag.org (this information is current as of The following resources related to this article are available online at http://www.sciencemag.org/content/344/6191/1489.full.html version of this article at: including high-resolution figures, can be found in the online Updated information and services, http://www.sciencemag.org/content/suppl/2014/06/25/344.6191.1489.DC1.html can be found at: Supporting Online Material http://www.sciencemag.org/content/344/6191/1489.full.html#ref-list-1 , 4 of which can be accessed free: cites 33 articles This article http://www.sciencemag.org/cgi/collection/physics Physics subject collections: This article appears in the following
منابع مشابه
Tightly bound trions in monolayer MoS2.
Two-dimensional (2D) atomic crystals, such as graphene and transition-metal dichalcogenides, have emerged as a new class of materials with remarkable physical properties. In contrast to graphene, monolayer MoS(2) is a non-centrosymmetric material with a direct energy gap. Strong photoluminescence, a current on/off ratio exceeding 10(8) in field-effect transistors, and efficient valley and spin ...
متن کاملDesign of a new MagFET-based Integrated Current Sensor Robust to EMI
− This paper deals with the susceptibility to electromagnetic interference of CMOS integrated current sensors for power transistor current monitoring. Conventional integrated solution are first considered, hence a new integrated current sensor based on the Hall effect in a split-drain MOS transistors (MagFET) is proposed. The susceptibility to radio frequency interference of a conventional (wir...
متن کاملMOS-FET as a Current Sensor in Power Electronics Converters
This paper presents a current sensing principle appropriate for use in power electronics' converters. This current measurement principle has been developed for metal oxide semiconductor field effect transistor (MOS-FET) and is based on U(DS) voltage measurement. In practice, shunt resistors and Hall effect sensors are usually used for these purposes, but the presented principle has many advanta...
متن کاملAn Analytical DC- and AC-Model for Vertical Smart Power DMOS Transistors
Smart Power MOS transistors serve primarily as an interface between digital control logic and the power load. Since they are also used in analog applications there are high demands on the accuracy of analytical models for circuit simulation. The approach for a physically based analytical model for vertical DMOS (double-diffused MOS) transistors which will be presented in this paper accounts for...
متن کامل